Solid-state sensor for determining hydrogen and/or NO.sub.x conc

Details Solid-state sensor for determining hydrogen and/or NO.sub.x conc Solid-state sensor for determining hydrogen and/or NO.sub.x conc

1989-12-08

1993-02-09

Johnston, Jill A.

Chemical apparatus and process disinfecting, deodorizing, preser

Analyzer, structured indicator, or manipulative laboratory...

Means for analyzing gas sample

422 95, 422 98, 427124, 427250, 427255, 4273767, B05D 302, G01N 2712

Patent

active

051851300

ABSTRACT:
A solid-state sensor is described for determining hydrogen and/or NO.sub.x concentration and the method for its preparation, it comprising a support on which a thin film of thickness between 80 and 200 nm is deposited consisting of tin (Sn) and bismuth (Bi) oxides, the quantity of bismuth in the thin film being between 5 and 7% in terms of atomic weight.

REFERENCES:
patent: 3901067 (1975-08-01), Boardman, Jr. et al.
patent: 4030340 (1977-06-01), Chang
patent: 4169369 (1979-10-01), Chang et al.
patent: 4387165 (1983-06-01), Youngblood
patent: 4579751 (1986-04-01), Forster
Madou, et al., Chemical Sensing with Solid State Devices, Academic Press, pp. 5-7.
Sberveglieri, et al., "Bismuth-doped tin oxide thin-film gas sensors," Sensors and Actuators B, 3 (1991) pp. 183-189.
Sberveglieri, et al., Journal of Materials Science Letters, 10 (1991) pp. 602-604.

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