Solid state semiconductor element and contact thereupon

Details Solid state semiconductor element and contact thereupon Solid state semiconductor element and contact thereupon

1978-06-13

1980-12-09

James, Andrew J.

357 65, 357 68, 357 69, 29569L, 29591, H01L 2348, H01L 2946, H01L 2954

Patent

active

042387647

ABSTRACT:
The device has a laser diode with an upper face of gallium arsenide which is partly covered with titanium which forms with the gallium arsenide an ohmic contact of low resistivity. Beneath the gallium arsenide an active layer for emitting light is interposed between two layers with which it forms heterojunction. The assembly is covered with gold which forms with Ga As an ohmic contact of a much higher resistivity. The lines of current and light emission form are thus localized under the titanium.

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patent: 3349297 (1967-10-01), Crowell et al.
patent: 3585075 (1971-06-01), Irvin et al.
patent: 3599060 (1971-08-01), Triggs
patent: 3616380 (1971-10-01), Lepselter
patent: 3751292 (1973-08-01), Kongable
patent: 3765970 (1973-10-01), Athanas
patent: 3840398 (1974-10-01), Sonntag
patent: 3894895 (1975-07-01), Khandelwal
patent: 3935635 (1976-02-01), Botzenhardt
patent: 4051508 (1977-09-01), Sato et al.

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