Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-05-30
2006-05-30
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S080000, C257S087000, C257S101000, C257S102000, C257S428000, C977S726000, C438S782000, C438S800000
Reexamination Certificate
active
07053422
ABSTRACT:
The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.
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patent: 6143201 (2000-11-01), Mano
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Notification of Transmittal of Copies of Translation of the International Preliminary Examination Report dated Jul. 1, 2004 and received by our foreign associate on Jul. 6, 2004.
Ando Masahiko
Koshida Nobuyoshi
Oda Shunri
Shiiki Masatoshi
Shimada Toshikazu
Huynh Andy
Japan Science and Technology Agency
Westerman Hattori Daniels & Adrian LLP
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