Solid-state rotational rate sensor device and method

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S415000, C257S420000, C340S973000, C340S974000, C073S514340, C073S862381, C073S17800T

Reexamination Certificate

active

06946695

ABSTRACT:
The present invention provides a solid-state rotational rate sensor device formed by a thin-film for generating an electrical voltage output proportional to the rate of rotational motion. The precision thin-film piezoelectric elements are configured and arranged on a semi-rigid structure to detect rotation (such as pitch, roll, and yaw) while rejecting spurious noise created by vibration, thermal gradients, and electro-magnetic interference.

REFERENCES:
patent: 6119518 (2000-09-01), Itou et al.
patent: 6140739 (2000-10-01), Arai et al.
patent: 6336366 (2002-01-01), Thundat et al.
patent: 6853315 (2005-02-01), Schiller et al.
patent: 0662601 (1995-07-01), None
PCT International Search Report.

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