Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-09-20
2005-09-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S415000, C257S420000, C340S973000, C340S974000, C073S514340, C073S862381, C073S17800T
Reexamination Certificate
active
06946695
ABSTRACT:
The present invention provides a solid-state rotational rate sensor device formed by a thin-film for generating an electrical voltage output proportional to the rate of rotational motion. The precision thin-film piezoelectric elements are configured and arranged on a semi-rigid structure to detect rotation (such as pitch, roll, and yaw) while rejecting spurious noise created by vibration, thermal gradients, and electro-magnetic interference.
REFERENCES:
patent: 6119518 (2000-09-01), Itou et al.
patent: 6140739 (2000-10-01), Arai et al.
patent: 6336366 (2002-01-01), Thundat et al.
patent: 6853315 (2005-02-01), Schiller et al.
patent: 0662601 (1995-07-01), None
PCT International Search Report.
Dorsey & Whitney LLP
Flynn Nathan J.
Forde Remmon R.
Triad Sensors, Inc.
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