Solid state RF power amplifier having improved efficiency and re

Details Solid state RF power amplifier having improved efficiency and re Solid state RF power amplifier having improved efficiency and re

1990-05-01

1991-06-25

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330149, 330307, H03F 3193

Patent

active

050270826

ABSTRACT:
An RF power device including a DMOS field effect transistor has increased efficiency and reduced distortion. A capacitor is connected between the gate and source input of the transistor which swamps non-linear variations of the parasitic capacitance (C.sub.GD) between the gate and drain, thereby offsetting the Miller effect of the feedback provided by the MOS transistor parasitic capacitance. The capacitor, the Ciss of the MOS transistor, and the inductance of input leads provide a device input resonant frequency between the input signal fundamental frequency and the first harmonic.

REFERENCES:
Sone et al., "Ku-And K- Band Internally Matched High-Power GaAs F.E.T. Amplifiers", Electronics Letters, vol. 15, No. 18, Aug. 30, 1979, pp. 562-564.

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