Solid state radiation imager with high integrity barrier layer a

Details Solid state radiation imager with high integrity barrier layer a Solid state radiation imager with high integrity barrier layer a

1993-07-29

1995-10-31

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

H01L 31055, H01L 27146

Patent

active

054632250

ABSTRACT:
A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250.degree. C. using tetraethoxysilane (TEOS) as the silicon source gas.

REFERENCES:
patent: 4311907 (1982-01-01), Takami et al.
patent: 4906850 (1990-03-01), Beerlage
patent: 4982095 (1991-01-01), Takahashi et al.
patent: 5187369 (1993-02-01), Kingsley et al.
patent: 5233181 (1993-08-01), Kwansnick et al.

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