Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2006-02-21
2006-02-21
Porta, David (Department: 2878)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S370140, C257S428000, C257S461000
Reexamination Certificate
active
07002158
ABSTRACT:
A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 kΩ and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 μs, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring α-ray spectra over the temperature range from 2 K to 50 K.
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Okamoto, A. and Shibasaki, I. “Transportation Phenomena of Sn-doped InSb Thin Films and Application to Hall Elements”, International Conference on Molecular Beam Epitaxy (Sep. 15-20, 2002), pp. 219-220.
Wm.C. McHarris, “InSb as a γ-Ray Detector”, Nuclear Instruments and Methods in Physics Research A242 (1986) pp. 373-375.
Ikuo Kanno, et al., “Cryogenic InSb detector for radiation measurements”, Review of Scientific Instruments, vol. 73, No. 7, Jul. 2002, pp. 2533-2536.
Kanno Ikuo
Katagiri Masaki
Nakamura Tatsuya
Sugiura Osamu
Banner & Witcoff , Ltd.
Japan Atomic Energy Research Institute
Porta David
Rosenberger Frederick F.
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