Solid state radiation detector

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257429, 257 72, 257 444, H01L 2714, H01L 2904, H01L 3106

Patent

active

054204526

ABSTRACT:
A radiation detection device includes a plurality of pixels, each pixel includes a thin film transistor and a photodiode conductively connected to a gate of the thin film transistor with the photodiode generating a current when the pixel is exposed to x-rays.

REFERENCES:
patent: 4067104 (1978-01-01), Tracy
patent: 4069355 (1978-01-01), Lubowski et al.
patent: 4200473 (1980-04-01), Carlson
patent: 4382187 (1983-05-01), Fraleux et al.
patent: 4467342 (1984-08-01), Tower
patent: 4660095 (1987-04-01), Cannella et al.
patent: 4670765 (1987-06-01), Nakamura et al.
patent: 4672454 (1987-06-01), Cannella et al.
patent: 4675739 (1987-06-01), Catchpole et al.
patent: 4689487 (1987-08-01), Nishiki et al.
patent: 4785186 (1988-11-01), Street et al.
patent: 4810881 (1989-03-01), Berger et al.
patent: 4982095 (1991-01-01), Takahashi et al.
Weisfield et al, "Materials Research Society", Amorphous Silicon Thin Film Transistor Array Technology: Applications in Printing and Document Scanning, vol. 95, pp. 469-474 (1987). Mater. Res. Soc. Symp. Proc. vol. 95.
Thompson et al, "Digest of Technical Papers", Page Width a-Si Image Scanner Technology, vol. XX, pp. 259-261. May 1989 SID Int. Symp. Balt. Md.
Carlson et al, "Amorphous Silicon Solar Cell", Applied Physics Letters, vol. 28, No. 11, pp. 671-673, Jun. 1, 1976.
Nemanich, "Schottky Barriers on a-Si:H", Semiconductors and Semimetals, vol. 21, Part C, pp. 375-406, 1984.
Nemanich et al, "Initial Reactions at the Interface of PT and Amorphous Silicon", J. Vac. Sci. Technol. B, pp. 519-523, Aug. 1983.
Thompson et al, "Silicide Formation in Pd-a-Si:H Schottky Barriers", Appl. Phys. Lett., pp. 274-276, Aug. 1, 1981.
Deneuville et al, "Influence of Preparation Conditions on Forward-Bias Currents of Amorphous Silicon Schottky Diodes", J. Appl. Phys., pp. 1414-1421, Mar. 1979.
Wronski et al, "Surface States and Barrier Heights of Metal-Amorphous Silicon Schottky Barriers", Solid State Communications, vol. 23, pp. 421-424, 1977.
Weimer et al, "Mulitelement Self-Scanned Mosaic Sensors", ICCE Spectrum, pp. 52-65, Mar. 1969.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Solid state radiation detector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state radiation detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state radiation detector will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-364467

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.