Solid state pressure sensors

Details Solid state pressure sensors Solid state pressure sensors

1989-03-29

1990-10-23

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Variable

G01L 912

Patent

active

049656970

ABSTRACT:
Solid state pressure sensors based upon aluminum gallium arsenide devices are disclosed. One embodiment uses a TEGFET as a hydrostatic pressure sensor. By adjustment of the gate voltage, it is possible to vary the operating conditions of the sensor, so as to adapt it dynamically to particular measurement conditions. Another hydrostatic pressure transducer, essentially made from aluminum gallium arsenide on a gallium arsenide substrate, comprises a layer sensitive to pressure and a layer sensitive to temperature: due to its homogeneous structure and its rigorous temperature compensation, this transducer offers both high accuracy and high sensitivity.

REFERENCES:
patent: 4196632 (1980-04-01), Sikorra
H606 U.S. Statutory Invention Registration, 3/1989; Ahn et al., filed 11/27/87.
8030 Electronic Letters--vol. 18 (1982), Sep., No. 18, London, Great Britain.
Phys. (Solid St. Phys 13 (1980), 4323-34 printed in Great Britain. The Conduction Band Structure and Deep Levels in GA.sub.1-x Al.sub.x As--Ashok K. Saxena.
Surface Science 142 (1984) 298-305--Hydrostatic Pressure Control of the Carrier Density in GaAs--J. M. Mercy, C. Bousquet, J. L. Robert . . .
Physical Review B--vol. 21, No. 2, Jan. 12, 1980--Pressure and Compositional Dependences of the Hall Coefficient in Al.sub.x Ga.sub.1-x As and their significance.
Physical Review B Volume 30, No. 8, Oct. 15, 1984--Comprehensive Analysis of Si-Doped Theory and Experiments.

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