Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-09-19
2006-09-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
Reexamination Certificate
active
07109124
ABSTRACT:
A solid state electronically steerable antenna can be generated from a sheet of semiconductor material by forming a pattern of localised plasma regions in the sheet, either by injecting carriers into, or by generating carriers in, those localised regions. A suitable solid state plasma antenna can be made from a silicon wafer (10) by first thermally oxidising the surfaces and subjecting the wafer (10) to a high temperature stabilisation process to improve the stoichiometry at the silicon/silica interface, and optionally also performing a low-temperature bake in a gas mixture including hydrogen. This produces a wafer (10) with a long minority carrier lifetime. Regions of the wafer (10) in which plasma may be generated are then defined by reticulation to form isolated regions with high minority carrier lifetime. The resulting discrete regions may be of a size less than 1 mm, for example 0.3 mm.
REFERENCES:
patent: 6060132 (2000-05-01), Lee
patent: 6268298 (2001-07-01), Sakata et al.
patent: 6656540 (2003-12-01), Sakamoto et al.
patent: 6660546 (2003-12-01), Ezaki
patent: 2002/0045354 (2002-04-01), Ye et al.
patent: 2002/0142572 (2002-10-01), Sakamoto et al.
patent: 2002/0164883 (2002-11-01), Ohmi et al.
patent: 0 230 969 (1987-08-01), None
patent: 63 111670 (1988-05-01), None
patent: WO 99 23719 (1999-05-01), None
patent: WO 01 71819 (2001-09-01), None
Golz A et al: “Fabrication of high-quality oxides on SiC by remote PECVD” Diamond and Related Materials, Elsevier Science Publishers, Amsterdam, NL, vol. 6, No. 10, Aug. 1, 1997, pp. 1420-1423.
Coffa S. et al: “Control of Minority Carrier Lifetime by Gold Implantation In Semiconductor Devices” Journal of the Electromechanical Society, Electrochemical Society. Manchester, N.H., US, vol. 136, No. 7, Jul. 1, 1989, pp. 2073-2075.
Stabille P J et al: “Optically Controlled Lateral Pin Diodes and Microwave Control Circuits” RCA Review, RCA Corp. Princeton, US, vol. 47, No. 4, Dec. 1, 1986, pp. 443-456.
Iandiorio & Teska
Lebentritt Michael
Plasma Antennas Ltd
Stevenson Andre′ C.
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