Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-09-30
1998-09-08
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257225, 348248, 348249, H01L 27148, H01L 29768, H04N 964
Patent
active
058048430
ABSTRACT:
In a solid state image pickup device including a semiconductor substrate, a photo/electro conversion element and a register formed within the semiconductor substrate, and an photoshield layer having a slit-type aperture for limiting light incident to the photo/electro conversion element, an optical element is provided for the slit-type aperture, to thereby pass polarized light having an electric field polarization face polarized in the longitudinal direction of the slit-type aperture.
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Morimoto et al., "A 2/3 -inch 2M-Pixel IT-CCD Image Sensor with Individual P-Wells for Separate V-CCD and H-CCD Formation", IEEE, ISSCC, TP 13.3, (1994) pp. 222,223 & 343.
Furumiya Masayuki
Hokari Yasuaki
NEC Corporation
Whitehead Carl W.
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