Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2011-03-01
2011-03-01
Porta, David P (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S370140, C257S222000, C257S238000, C257S431000, C257S435000
Reexamination Certificate
active
07897928
ABSTRACT:
A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
REFERENCES:
patent: 5856667 (1999-01-01), Spirig et al.
patent: 2005/0040445 (2005-02-01), Mouli
patent: 2008/0247033 (2008-10-01), Buettgen et al.
patent: 1085315 (2001-03-01), None
patent: 1152261 (2001-11-01), None
patent: 2001267544 (2001-09-01), None
Sprig et al. (1997). “The Multitap Lock-In CCD with Offset Subtraction”. IEEE Transactions on Electron Devices (44) 10: p. 1643-7.
Lange et al. (2000). “Demodulation Pixels in CCD and CMOS Technologies for Time-of-Flight Ranging.” Proceedings of SPIE (3965): p. 177-188.
International Search Report from International Application No. PCT/CH2005/000436, mailed on Nov. 16, 2005.
Buettgen, B. et al., “Demonstration of a Novel Drift Field Pixel Structure for the Demodulation of Modulated Light Waves with Application in Three-Dimensional Image Capture,” SPIE vol. 5302, Apr. 2004, pp. 9-20.
Lakowicz, J., “Principles of Fluorescence Spectroscopy,” Kluwer Academic and Plenum Publishers, New York, 1999, pp. 1-24.
Lange, R. et al., “Solid-State Time-of-Flight Range Camera,” IEEE Journal of Quantum Electronics, vol. 37, No. 3, Mar. 2001, pp. 390-397.
Miyagawa, R. et al., “CCD-Based Range-Finder Sensor,” IEEE Transactions on Electron Devices, vol. 44, No. 10, Oct. 1997, pp. 1648-1652.
Rowe, H. M. et al., “Elimination of Fluorescence and Scattering Backgrounds in Luminescence Lifetime Measurements Using Gated-Phase Fluorometry,” Anal. Chem. 2002, vol. 74, pp. 4821-4827.
Theuwissen, A. J. P., “Solid State Imaging with Charge Coupled Devices,” Kluwer Academic Publishers, Dordrecht, 1995, pp. 7-51.
Kaufmann Rolf
Lehmann Michael
Neukom Simon
Oggier Thierry
Bryant Casey
Houston Eliseeva LLP
MESA Imaging AG
Porta David P
LandOfFree
Solid-state photodetector pixel and photodetecting method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid-state photodetector pixel and photodetecting method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state photodetector pixel and photodetecting method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2769952