Solid-state optical device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Reexamination Certificate

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Details

C257S612000, C257S099000, C313S512000, C362S034000, C362S084000, C362S245000

Reexamination Certificate

active

07667223

ABSTRACT:
A solid-state optical device includes a solid-state element, a power supplying/retrieving portion on which the solid-state element is mounted, the power supplying/retrieving portion supplying or retrieving electric power to/from the solid-state element, and a glass sealing material that seals the solid-state element. The glass sealing material has a thermal expansion coefficient equivalent to that of the power supplying/retrieving portion. The glass sealing material includes a P2O5—Al2O3—ZnO-based low-melting glass that includes 55 to 62 wt % of P2O5, 5 to 12 wt % of Al2O3and 20 to 40 wt % of ZnO in weight %.

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Japanese Office Action dated Dec. 2, 2008 with Partial English Translation.
Japanese Office Action dated Feb. 17, 2009 with Partial English Translation.
Japanese Office Action dated Jun. 2, 2009 with Partial English Translation.

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