Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2008-11-14
2010-02-23
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S612000, C257S099000, C313S512000, C362S034000, C362S084000, C362S245000
Reexamination Certificate
active
07667223
ABSTRACT:
A solid-state optical device includes a solid-state element, a power supplying/retrieving portion on which the solid-state element is mounted, the power supplying/retrieving portion supplying or retrieving electric power to/from the solid-state element, and a glass sealing material that seals the solid-state element. The glass sealing material has a thermal expansion coefficient equivalent to that of the power supplying/retrieving portion. The glass sealing material includes a P2O5—Al2O3—ZnO-based low-melting glass that includes 55 to 62 wt % of P2O5, 5 to 12 wt % of Al2O3and 20 to 40 wt % of ZnO in weight %.
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Japanese Office Action dated Dec. 2, 2008 with Partial English Translation.
Japanese Office Action dated Feb. 17, 2009 with Partial English Translation.
Japanese Office Action dated Jun. 2, 2009 with Partial English Translation.
Aida Kazuya
Ohtsuka Masaaki
Sawanobori Naruhito
Suehiro Yoshinobu
Watanabe Hiroki
Green Telly D
McGinn IP Law Group PLLC
Smith Zandra
Sumita Optical Glass Inc.
Toyoda Gosei Co,., Ltd.
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