Solid-state optical device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Reexamination Certificate

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Details

C257S612000, C257S099000, C313S512000, C362S034000, C362S084000, C362S245000

Reexamination Certificate

active

07470926

ABSTRACT:
A solid-state optical device having: a solid-state element; a power supplying/retrieving portion that supplies or retrieves electric power to/from the solid-state element; and a glass sealing material that seals the solid-state element. The glass sealing material is made of a P2O5—ZnO-based low-melting glass that has 45 to 50 wt % of P2O5and 15 to 35 wt % of ZnO.

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Chinese Office Action Dated Jun. 22, 2007, with English-language translation.
Japanese Office Action dated Oct. 7, 2008 with Partial English Translation.

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