Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-09-08
2008-12-30
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S612000, C257S099000, C313S512000, C362S034000, C362S084000, C362S245000
Reexamination Certificate
active
07470926
ABSTRACT:
A solid-state optical device having: a solid-state element; a power supplying/retrieving portion that supplies or retrieves electric power to/from the solid-state element; and a glass sealing material that seals the solid-state element. The glass sealing material is made of a P2O5—ZnO-based low-melting glass that has 45 to 50 wt % of P2O5and 15 to 35 wt % of ZnO.
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Chinese Office Action Dated Jun. 22, 2007, with English-language translation.
Japanese Office Action dated Oct. 7, 2008 with Partial English Translation.
Aida Kazuya
Ohtsuka Masaaki
Sawanobori Naruhito
Suehiro Yoshinobu
Watanabe Hiroki
Green Telly D
McGinn IP Law Group PLLC
Smith Zandra
Sumita Optical Glass Inc.
Toyoda Gosei Co., Ltd
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