Patent
1987-12-16
1989-06-13
Carroll, J.
357 4, 357 6, 357 10, 357 54, 350357, H01L 4500, H01L 2712, H01L 4902, H01L 2912
Patent
active
048397008
ABSTRACT:
A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.
REFERENCES:
patent: Re28199 (1974-10-01), Deb et al.
patent: 3521941 (1970-09-01), Deb et al.
patent: 3748501 (1973-07-01), Fritzsche et al.
patent: 4187530 (1980-02-01), Singh et al.
patent: 4317686 (1982-03-01), Anand et al.
Daud Taher
Ramesham Rajeshuni
Thakoor Aniklumar P.
Thakoor Sarita
California Institute of Technology
Carroll J.
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