Solid state ionization chamber of silicon PN-junction type

Details Solid state ionization chamber of silicon PN-junction type Solid state ionization chamber of silicon PN-junction type

1975-11-26

1977-08-02

Borchelt, Archie R.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

357 63, G01T 124

Patent

active

040398080

ABSTRACT:
An N/P type silicon solar cell is doped with copper and encased in an aluminum sheath to form a probe. A heavy metal foil means is inserted in the probe to accomplish a solid state ionization chamber of silicon PN-junction type.

REFERENCES:
patent: 3160567 (1964-12-01), Steinberg et al.
patent: 3485684 (1969-12-01), Mann et al.
patent: 3576996 (1971-05-01), Stevens

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