Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2003-09-18
2008-09-02
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S291000, C257SE27133, C257SE27150
Reexamination Certificate
active
07420231
ABSTRACT:
A proper incident state can be obtained in each pixel in accordance with a distance between an optical system and a sensor photoreceptive portion, and improved photoreceptive efficiency and even sensitivity of pixels can be attempted.Since a main light beam a launches on pixels in a screen peripheral part at an angle of incidence θ, a microlens (260), color filter (250), wires (220, 230and240), photodiode (110) and so on are disposed along the direction of incidence in accordance with the angle of incidence θ in a positional relationship. The angle of incidence θ here is determined in consideration of a distance from the microlens (260) to the surface of the silicon substrate (100) and a position in depth of the photoelectric converting portion of the photodiode (110) from the surface of the silicon substrate (100). The photoelectric converting portion (n-type region) of the photodiode (110) tilts in a pixel in the screen peripheral part in accordance with the angle of incidence θ.
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International Search Report mailed Dec. 24, 2003.
Kananen Ronald P.
Kebede Brook
Rader & Fishman & Grauer, PLLC
Sony Corporation
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