Solid state imaging element with bus breakage detector

Details Solid state imaging element with bus breakage detector Solid state imaging element with bus breakage detector

1991-10-08

1993-05-04

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Particular input or output means

257 24, 257231, 257292, G11C 1928, H01C 2978

Patent

active

052088413

ABSTRACT:
A solid state imaging element includes a plurality of photodetectors arranged in a two-dimensional array on a semiconductor substrate, first and second charge transfer circuits for transferring signal charges in a vertical direction and a horizontal direction, respectively, a plurality of transfer gates for controlling charge transfer from the photodetectors to the first charge transfer circuit, a scanner for controlling switching of the transfer gates, a plurality of bus lines connecting the transfer gates with the scanner, and a bus line breakage checking circuit. The bus line breakage checking circuit includes a plurality of transistors connected in series with respective bus lines, a test pad connected with the bus lines through the transistors, and a voltage applying pad for applying a voltage to control switching of the transistors. Therefore, the breakage of a bus line can be detected in a wafer test without actually operating the element, whereby time and money are saved.

REFERENCES:
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patent: 4954895 (1990-09-01), Akimoto et al.
patent: 5060038 (1991-10-01), Kimata et al.
Kimata et al, "A 480.times.480 Element Image Sensor with a Charge Sweep Device", IEEE International Solid-State Circuits Conference, 1985, pp. 100-101.
Kimata et al, "A 512.times.512 Element PtSi Schottky-Barrier Infrared Image Sensor", IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6, 1987, pp. 1124-1129.

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