Solid-state imaging element and imaging device with...

Details Solid-state imaging element and imaging device with... Solid-state imaging element and imaging device with...

2007-05-29

2007-05-29

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S443000, C257S215000, C257S231000, C348S302000

Reexamination Certificate

active

10920187

ABSTRACT:
A solid-state imaging element converts light intensity into an electric charge signal and stores the thus-converted electric charge signal through use of a plurality of photoelectric conversion elements arranged in a square lattice pattern on the surface of a semiconductor substrate in a row direction and a column direction. Vertical transfer sections transfer the electric charges from the first and second photoelectric conversion elements in the column direction. The vertical transfer section comprises a first electric charge reading region for reading electric charge from the first photoelectric conversion element to a vertical transfer channel; and a second electric charge reading region for reading electric charge from the second photoelectric conversion element. The first and second electric charge reading regions are provided at positions corresponding to a vertical transfer electrode, which are activated in difference phases.

REFERENCES:
patent: 4500915 (1985-02-01), Koike et al.
patent: 5306906 (1994-04-01), Aoki et al.
patent: 6320593 (2001-11-01), Sobel et al.
patent: 2000-069491 (2000-03-01), None
patent: 2000-69491 (2000-03-01), None
patent: 2000-316163 (2000-11-01), None
patent: 2001-8104 (2001-01-01), None

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