Solid state imaging element

Facsimile and static presentation processing – Facsimile – Specific signal processing circuitry

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Details

357 24LR, 357 24M, 357 30, 35821316, H01L 2978

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active

049807358

ABSTRACT:
A solid state imaging element includes a first conductivity type semiconductor substrate, a light-electricity conversion section for generating electrical charges in response to incident light including a second conductivity type layer disposed in the semiconductor substrate, a charge storage section having a layer of the second conductivity type disposed in the substrate for storing signal charges from the light-electricity conversion, transfer section for transferring signal charges from the storatge section, a first conductivity type layer disposed at the surface of substrate over the light-electricity conversion section and the charge storage section, and a light shielding film covering the transfer section wherein the concentration of dopant impurities in the charge storage section is higher than that in the light-electricity conversion section.

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Sekine et al., "CCD Linear Image Sensor", Toshiba Review, No. 127, 6/1980.
Monoi et al., "Improvement of Image . . . Elements", Presented at the National Meeting of Society of Television Engineers in 1984.

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