Solid-state imaging device with polycrystalline film

Details Solid-state imaging device with polycrystalline film Solid-state imaging device with polycrystalline film

1985-10-22

1988-04-19

James, Andrew J.

357 59, 357 31, 357 32, 357 24, H01L 2714

Patent

active

047393840

ABSTRACT:
A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.

REFERENCES:
patent: 4323912 (1982-04-01), Koike et al.
patent: 4581620 (1986-04-01), Yamazaki et al.
patent: 4589003 (1986-05-01), Yamada et al.
patent: 4620058 (1986-10-01), Winterling et al.

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