Solid state imaging device with photoconductive layer

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Details

357 24, H01L 2714, H01L 3100, H01L 2978

Patent

active

045996377

ABSTRACT:
A solid state imaging device having a semiconductor substrate including charge storage sections and charge transferring sections, a photoconductive layer provided on the semiconductor substrate, and a transparent electrode formed on the photoconductive layer. After transferring the charges in the charge storage sections to the charge transferring sections, the transparent electrode is applied with high voltage to release trapped charges at the trap level of the photoconductive layer. Thereby highlight image lag can be reduced.

REFERENCES:
patent: 4236829 (1980-12-01), Chikamura et al.
patent: 4271240 (1981-06-01), Chikamura et al.
patent: 4323912 (1982-04-01), Kolke et al.
patent: 4360821 (1982-11-01), Tsukada et al.
patent: 4462047 (1984-07-01), Fujimoto et al.

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