Solid-state imaging device with nand cell structure

Details Solid-state imaging device with nand cell structure Solid-state imaging device with nand cell structure

1993-12-27

1995-05-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257232, 257233, 257240, 257241, H01L 2978, H01L 2714, H01L 3100

Patent

active

054183871

ABSTRACT:
A solid-state imaging device includes a semiconductor substrate, an array of cells on the substrate, a plurality of vertical charge transfer sections extending in a first direction on the substrate, and a horizontal charge transfer section extending in a second direction transverse to the first direction on the substrate and being coupled to the vertical charge transfer section. The cell array includes a plurality of columns of cells that are associated with a corresponding one of the vertical transfer sections. The cell columns include a predetermined number of spaced-part cells that are series-connected along the second direction to constitute a NAND type cell structure. At least one cell-to-cell charge transfer electrode overlies a channel region as defined between adjacent ones of the NAND cells in the substrate.

REFERENCES:
patent: 4694316 (1987-09-01), Chabbal
patent: 4744057 (1988-05-01), Descure et al.
patent: 4912560 (1990-03-01), Osawa et al.
patent: 5237190 (1993-08-01), Wu et al.
"Metal-Nitride-Oxide-Silicon-Capacitor Arrays as Electrical and Optical Stores", Vanstone, G. F., Electronics Letters, vol. 8, No. 1, pp. 13-14, Jan. 1972.

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