Solid state imaging device with low trap density

Details Solid state imaging device with low trap density Solid state imaging device with low trap density

1995-06-07

1997-01-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257 72, 257291, 257292, 437 3, 437174, 437907, 437908, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

055919880

ABSTRACT:
A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.

REFERENCES:
patent: 4598305 (1986-07-01), Chiang et al.
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5254480 (1993-10-01), Tran
patent: 5273910 (1993-12-01), Tran et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5413958 (1995-05-01), Imahashi et al.

Affiliated with

Also associated with

Rating

Solid state imaging device with low trap density does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state imaging device with low trap density, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state imaging device with low trap density will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1766576