Solid-state imaging device with internal smear eliminator

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257233, 257435, H01L 29796, H01L 2714, H01L 3100

Patent

active

054632323

ABSTRACT:
A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.

REFERENCES:
patent: 4373167 (1983-02-01), Yamada
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4982252 (1991-01-01), Matsunga
patent: 5028972 (1991-07-01), Watanabe et al.
patent: 5045906 (1991-09-01), Nagaya
IEEE Transactions on Electron Devices, vol. ED-34, No. 5, pp. 1052-1056, May 1987, N. Teranishi, et al., "Smear Reduction in the Interline CCD Image Sensor".

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