Solid-state imaging device with biased light shielding film

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S291000, C257S292000, C257S293000, C257S435000, C257S436000, C257S438000, C257S439000, C257S462000, C257S463000, C257S464000, C257S265000, C257SE31053, C257SE31054, C257SE31083, C257SE31085, C257SE31091

Reexamination Certificate

active

07821093

ABSTRACT:
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

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