Solid-state imaging device production method and solid-state...

Details Solid-state imaging device production method and solid-state... Solid-state imaging device production method and solid-state...

2006-01-31

2006-01-31

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S038000, C257S431000

Reexamination Certificate

active

06991951

ABSTRACT:
A solid-state imaging device production method is provided. A light-receiving section12is formed on a semiconductor substrate1. A first insulating film6is formed on a light-receiving section12and the semiconductor substrate1. A metal film for wiring is formed on the first insulating film6. A protection film8is formed on the metal film. A resist film is formed on a predetermined region of the protection film. A portion of the protection film8and a portion of the metal film is removed by using the resist film to form a wire7whose upper face is covered by the protection film8. A hydrogen-containing second insulating film10is formed on the wire7and the first insulating film6. A heating process is performed for the second insulating film10. An anisotropic etching process is performed for the entire surface of the second insulating film10to remove the second insulating film10.

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patent: 2002-016134 (2002-01-01), None

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