Solid state imaging device, method of manufacturing the...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S439000

Reexamination Certificate

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07939359

ABSTRACT:
A solid state imaging device includes: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

REFERENCES:
patent: 6821809 (2004-11-01), Abe et al.
patent: 7701029 (2010-04-01), Mabuchi
patent: 2003-338615 (2003-11-01), None

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