Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-11-27
2011-10-18
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S096000, C257S435000, C257SE31127, C257SE33072, C257SE21527
Reexamination Certificate
active
08039914
ABSTRACT:
A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.
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Translation of JP-2006-261372, cited on IDS filed Nov. 27, 2007, Detailed Description 1-18 Pages, Drawings 1-16 Pages.
A Japanese Office Action dated Feb. 17, 2009 issued in connection with counterpart Japanese Patent Application No. 2006-331559.
Japanese Patent Office Action corresponding to Japanese Serial No. 2006-331559 dated Feb. 16, 2010.
Garcia Joannie A
Richards N Drew
SNR Denton US LLP
Sony Corporation
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