Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-03-06
2007-03-06
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S053000, C257S080000, C257S083000, C257S113000, C257S444000, C257S462000
Reexamination Certificate
active
10845288
ABSTRACT:
A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.
REFERENCES:
patent: 6940059 (2005-09-01), Mabuchi
Louie Wai-Sing
Rockey, Depke, Lyons & Kitzinger LLC
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