Solid state imaging device, method for producing the same,...

Details Solid state imaging device, method for producing the same,... Solid state imaging device, method for producing the same,...

2006-05-30

2006-05-30

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S200000

Reexamination Certificate

active

07052928

ABSTRACT:
A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.

REFERENCES:
patent: 6136629 (2000-10-01), Sin
patent: 6512547 (2003-01-01), Miida
patent: 6742022 (2004-05-01), King et al.
patent: 2001-177805 (2001-06-01), None

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