Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-06
2007-11-06
Dickey, Thomas (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S088000, C257S222000, C257S225000, C257SE27154, C257SE27130
Reexamination Certificate
active
11188893
ABSTRACT:
A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the read signal charges. The two-layer vertical transfer electrodes have first transfer electrode layers and second transfer electrode layers, and the first transfer electrode layers serve as read electrodes for reading the signal charges from the photosensor sections. The first transfer electrode layers have a larger electrode width with respect to the photosensor sections than the second transfer electrode layers.
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patent: 4481522 (1984-11-01), Jastrzebski et al.
patent: 4543601 (1985-09-01), Harada et al.
patent: 6018169 (2000-01-01), Tohyama
patent: 06-268192 (1994-09-01), None
Dickey Thomas
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Wilson Scott R.
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