Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-07-03
2010-12-07
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S436000, C257S446000, C257S432000, C257SE31127
Reexamination Certificate
active
07847361
ABSTRACT:
A solid state imaging device includes a plurality of imaging pixels that are arranged two-dimensionally along a main face of a semiconductor substrate. Each imaging pixel in the solid state imaging device includes a photodiode that performs photoelectric conversion and a color filter that is disposed higher in the Z axis direction than the photodiode. Also, light blocking portions have been formed between pairs of adjacent imaging pixels, on the main face of the semiconductor substrate to a height in a thickness direction (Z axis direction) of the semiconductor substrate that is substantially equal to or higher than top edges of the optical filters. Each light blocking portion is constituted from a combination of a light blocking film and a light blocking wall.
REFERENCES:
patent: 7023034 (2006-04-01), Kuriyama
patent: 2001/0024184 (2001-09-01), Maeda
patent: 2006/0169878 (2006-08-01), Kasano et al.
patent: 2006/0186547 (2006-08-01), Wang et al.
patent: 2001-077339 (2001-03-01), None
Liu Benjamin Tzu-Hung
McDermott Will & Emery LLP
Ngo Ngan
Panasonic Corporation
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