Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-12-07
1996-12-31
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257233, 257240, 257243, H01L 27148, H01L 29768
Patent
active
055896987
ABSTRACT:
A charge transfer device for making a compact solid state imaging apparatus. The device has a sloping potential gradient in the vertical to horizontal charge coupling region to achieve an increasing fringe electrical field without increasing the actual electrode width or the actual channel widths. A first region, serving as the charge storage region, at the terminal end of the vertical charge transfer section, is broadened gradually towards the horizontal charge transfer section while narrowing the terminal end of the second region, serving as the charge barrier region, towards the horizontal charge transfer section. The effective width changes of the storage and barrier regions take place in a complementary manner within one vertical channel section so that the actual width of the channel section remains constant.
REFERENCES:
patent: 4987466 (1991-01-01), Shibata et al.
patent: 5182622 (1993-01-01), Iizuka et al.
patent: 5286989 (1994-02-01), Yonemoto
patent: 5365093 (1994-11-01), Kuno
Mintel William
NEC Corporation
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