Solid state imaging device having silicon carbide crystal layer

Details Solid state imaging device having silicon carbide crystal layer Solid state imaging device having silicon carbide crystal layer

1992-12-21

1994-02-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

2571831, 257222, 257233, H01L 2978

Patent

active

052890171

ABSTRACT:
A solid state imaging device of claim 1, wherein the silicon carbide crystal layer is formed on a silicon substrate such that the insulating film is interposed between said silicon carbide crystal layer and said silicon substrate. Since the charge transfer part and the imaging part are formed in the silicon carbide layer, the device can normally operate even in a high-temperature or intensive radioactive ray environment the method for producing the device is also disclosed.

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