Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-03-24
2000-03-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257432, 257435, 257437, H01L 27148, H01L 29768
Patent
active
060405910
ABSTRACT:
It is possible to provide a smaller-sized and higher resolution solid-state imaging device by making it possible to adjust a focal position without considerably changing a radius of curvature of a microlens formed on a photosensor portion and without increasing a thickness of a layer on the photosensor portion. A microlens (17) is formed at a corresponding position on a sensor portion (2). A layer (18) having low refractive index as compared with refractive index of the microlens (17). A solid-state imaging device (10) having an uppermost surface thereof formed as a substantially flat surface is arranged.
REFERENCES:
patent: 5479049 (1995-12-01), Aoki et al.
patent: 5583354 (1996-12-01), Ishibe
patent: 5691548 (1997-11-01), Akio
patent: 5844290 (1998-12-01), Furumiya
Ngo Ngan V.
Sony Corporation
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