Solid state imaging device having partition wall for partitionin

Details Solid state imaging device having partition wall for partitionin Solid state imaging device having partition wall for partitionin

1994-02-14

1995-03-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257294, 257432, 257435, 257446, H01L 2714

Patent

active

053960904

ABSTRACT:
A solid state imaging device capable of efficiently collecting incident light onto its photodetecting portions and a method for manufacturing the device are provided. A plurality of photodetecting portions and an electric charge transfer portion are formed on a surface of a semiconductor substrate, and a flattening layer which has a light transmitting property and serves to cover the plural number of photodetecting portions and the electric charge transfer portion are formed. A partition wall material layer for covering the flattening layer is formed, and a plurality of approximately rectangular regions of the partition wall material layer are removed to form a partition wall. Then, a thermosoftening resin layer which has a light transmitting property and serves to cover the flattening layer and the partition wall is formed. A region of the thermosoftening resin layer covering the partition wall is removed to form a rectangular parallelepiped thermosoftening resin block corresponding to each photodetecting portion. The thermosoftening resin block is softened by heat application to be thermally transformed into a plurality of micro lenses of which bottom portions are peripherally partitioned by the partition wall.

REFERENCES:
patent: 5172206 (1992-12-01), Iizuka

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