Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-02-07
1993-07-06
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257236, 257241, H01L 2978, H01L 2714, H01L 3100
Patent
active
052256952
ABSTRACT:
A solid-state imaging device of the invention is provided with a CCD-structured branching unit which selects one signal charge sensor having characteristics suitable for the conditions of use from among a plurality of signal charge sensors each having different characteristics and forms a signal charge transmission path leading from the horizontal CCD to the selected signal charge sensor. As a result, there is no need to switch over the external circuit of the solid-state imaging device according to the conditions of use, which makes it possible to hold down the cost and reduce the size of the external size.
REFERENCES:
patent: 4567524 (1986-01-01), Levine
patent: 4649554 (1987-03-01), Boudewijns et al.
Y. Kiriyama, Japanese Laid-Open Patent Publication No. 3-159382, laid-open date of Jul. 9, 1991.
Naka Shun-ichi
Watanabe Takashi
Conlin David G.
Corless Peter F.
James Andrew J.
Neuner George W.
Ngo Ngan Van
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