Solid-state imaging device having improved sensitivity and...

Details Solid-state imaging device having improved sensitivity and... Solid-state imaging device having improved sensitivity and...

2011-07-05

2011-07-05

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S432000, C257S436000, C257SE27134

Reexamination Certificate

active

07973378

ABSTRACT:
Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

REFERENCES:
patent: 6833601 (2004-12-01), Murakami
patent: 2007/0030380 (2007-02-01), Higuchi et al.
patent: 2007/0117349 (2007-05-01), Komatsu et al.
patent: 2008/0018770 (2008-01-01), Kato
patent: 2008/0074527 (2008-03-01), Kato
patent: 2008/0143829 (2008-06-01), Takeda
patent: 2008/0158359 (2008-07-01), Takeda
patent: 2008/0170143 (2008-07-01), Yoshida
patent: 4-34977 (1992-02-01), None
patent: 2910161 (1999-04-01), None
patent: 2003-234456 (2003-08-01), None
English language Abstract of JP 4-34977, Feb. 5, 1992.
English language Abstract of JP 2003-234456, Aug. 22, 2003.

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