Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-11-24
1994-10-18
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257230, 257232, 257233, 257241, 377 62, H01L 2978, H01L 2714, H01L 3100
Patent
active
053571290
ABSTRACT:
There is provided a solid state imaging device having high-sensitivity, low-noise characteristics by reducing electrostatic capacity relating to interconnection. The solid state imaging device includes a photoelectric conversion section, a transfer section, a floating diffusion layer for receiving signal charges from the transfer section, and an output transistor having a gate electrode connected to the floating diffusion layer via an interconnection. A source and a drain of the output transistor are provided commonly within a flat p-type well of relatively thin concentration in which the photoelectric conversion section, the transfer section, and the floating diffusion layer are also provided. It becomes possible to reduce an interconnection capacity, a gate-drain capacity, and a gate-channel capacity, to increase gain of a source follower circuit, to relax electric fields in the vicinity of the drain, and to prevent electric charges from inflow and outflow from substrate, without any increase in the fabrication process. As a result, a high-sensitivity, low-noise solid state imaging device can be offered.
REFERENCES:
patent: 4660064 (1987-04-01), Hamasaki
patent: 5029190 (1991-07-01), Narabu et al.
patent: 5202907 (1993-04-01), Yonemoto
Conlin David G.
Fournier Kevin J.
Ngo Ngan V.
O'Connell Robert F.
Sharp Kabushiki Kaisha
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