Solid-state imaging device having an unwanted charge drain secti

Details Solid-state imaging device having an unwanted charge drain secti Solid-state imaging device having an unwanted charge drain secti

1997-05-05

1998-06-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257223, 257232, 257233, H01L 27148, H01L 29768

Patent

active

057708703

ABSTRACT:
A solid-stage imaging device has a region in which there is disposed an unwanted charge drain section 106 for receiving unwanted charges drained from vertical charge transfer sections 102 and a horizontal charge transfer section 103. A P-type well layer 302 is not disposed in the region, and a voltage is applied to an N.sup.-- -type semiconductor substrate 301 in a direction opposite to a voltage applied to the P-type well layer 302 for draining unwanted charges to the N.sup.-- -type semiconductor substrate 301. The unwanted charge drain section can be fabricated without an increase in the number of fabrication steps for manufacturing the solid-state imaging device.

REFERENCES:
patent: 4733406 (1988-03-01), Kinoshita et al.
patent: 5283450 (1994-02-01), Harada
patent: 5326997 (1994-07-01), Nakanishi

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