Solid-state imaging device having a predetermined impurity layer

Details Solid-state imaging device having a predetermined impurity layer Solid-state imaging device having a predetermined impurity layer

1990-12-05

1992-06-16

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 30, 35821315, H01J 4014

Patent

active

051226499

ABSTRACT:
A MOS-type solid-state imaging device is disclosed capable of high speed scanning. The imaging device includes a plurality of photodiodes arranged in a matrix form, a vertical scanning circuit, a horizontal scanning circuit, a first group of switching transistors and a second switching transistors. The imaging device enables multiple pixel signals to be simultaneously outputted without adversely effecting adjacent pixel signals during a scanning operations. A separating layer formed of an impurity layer held at a predetermined potential is embedded at least between two adjacent switching transistors, thereby separating the capacitive coupling between the two adjacent sets of switching transistors.

REFERENCES:
patent: 4223330 (1980-09-01), Koike et al.
patent: 4743955 (1988-05-01), Matsumoto
patent: 4857751 (1989-08-01), Hatanaka et al.
patent: 4910568 (1990-03-01), Takei et al.

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