Solid-state imaging device having a plurality of lines...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Details

C348S251000, C348S302000, C257S291000

Reexamination Certificate

active

07847848

ABSTRACT:
In a MOS-type solid-state imaging device1,in pixels101to104in which lines in an upper layer (charge transfer lines1018to1048) are formed in shifted positions located toward a center L1of an image area, each two oppositely disposed pixels with the center L1of the image area sandwiched therebetween, such as a pixel101and a pixel104have the following relation. In each of the pixels101and104,power supply lines1016and1046,vertical signal lines1017and1047,and charge transfer lines1018and1048relating to each of the pixels101and104are arranged symmetrically with respect to an imaginary plane extending from the center L1of a sensor10in a direction orthogonal to the drawing page in an X-axis direction.

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