Solid-state imaging device having a defect control layer and...

Details Solid-state imaging device having a defect control layer and... Solid-state imaging device having a defect control layer and...

2006-05-17

2009-02-03

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S292000, C257S294000, C257S463000, C257SE27133

Reexamination Certificate

active

07485939

ABSTRACT:
An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an impurity concentration in the inversion layer is at least twice as high as an impurity concentration in the photo diode.

REFERENCES:
patent: 2002/0017655 (2002-02-01), Fujisawa et al.
patent: 2004/0178430 (2004-09-01), Rhodes et al.
patent: 2005/0230720 (2005-10-01), Miyagawa et al.
patent: 2007/0052056 (2007-03-01), Doi et al.
patent: 2007/0069260 (2007-03-01), Stevens
patent: 2007/0069321 (2007-03-01), Hwang
patent: 11-074499 (1999-03-01), None
Rech, I. et al. “A New Approach to Optical Crosstalk Modeling in Single-Photon Avalanche Diodes”. IEEE Photonics Technology Letters, vol. 20, No. 5, pp. 330-332. Mar. 1, 2008.

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