Solid-state imaging device comprising an N-type layer...

Details Solid-state imaging device comprising an N-type layer... Solid-state imaging device comprising an N-type layer...

2011-03-29

2011-03-29

Pert, Evan (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S419000, C257S292000, C257SE27162

Reexamination Certificate

active

07915069

ABSTRACT:
An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a p+semiconductor substrate. An imaging area including a plurality of n type semiconductor regions making photoelectric conversion and a plurality of p type semiconductor region for isolation formed around the n type semiconductor regions, is formed in the n/p semiconductor substrate. The n type semiconductor layer is divided into an upper layer and a lower layer. A second n type semiconductor region is formed to connect to the p+type semiconductor substrate from a surface of the n/p semiconductor substrate in a peripheral region of the imaging area.

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