Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-05-01
2011-11-22
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000, C257S460000, C257S461000, C257S463000, C257S464000, C257SE31127
Reexamination Certificate
active
08063461
ABSTRACT:
To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which incorporate the solid-state imaging device.A solid-state imaging device including: a photoelectric conversion element PD formed in a semiconductor substrate22; a reading-out part which reads out signal charges from the photoelectric conversion element PD formed on one surface side of the semiconductor substrate22; the other surface of the semiconductor substrate22made to a light incidence surface; and a pixel which exclusively makes light of a specific wavelength or longer photoelectrically converted, by adjusting pn junction depths h2 [h2r, h2g, h2b] between the photoelectric conversion element PD and an accumulation layer28on the light incidence surface side. A camera module and an electronic equipment module which incorporate the solid-state imaging device.
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Japanese Patent Office Action corresponding to Japanese Serial No. 2004-253590 dated Jul. 14, 2009.
Ngo Ngan
SNR Denton US LLP
Sony Corporation
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