Solid-state imaging device, camera and method of producing...

Details Solid-state imaging device, camera and method of producing... Solid-state imaging device, camera and method of producing...

2008-10-09

2010-11-30

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S447000, C257SE31054

Reexamination Certificate

active

07843027

ABSTRACT:
A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and (b) a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration; wherein the second impurity concentration has a concentration gradient increasing toward the second surface side.

REFERENCES:
patent: 6025585 (2000-02-01), Holland
patent: 2002/0038874 (2002-04-01), Egashira
patent: 2003/0170928 (2003-09-01), Shimozono et al.
patent: 2003/0214595 (2003-11-01), Mabuchi
patent: 2004/0005729 (2004-01-01), Abe et al.
patent: 2004/0113185 (2004-06-01), Shibayama et al.
patent: 2006/0006488 (2006-01-01), Kanbe
patent: 2006/0125038 (2006-06-01), Mabuchi
patent: 2004-134672 (2004-04-01), None

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