Solid-state imaging device, camera and method of producing...

Details Solid-state imaging device, camera and method of producing... Solid-state imaging device, camera and method of producing...

2005-06-29

2008-11-18

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S058000, C438S143000, C438S471000, C257SE23137, C257SE27133

Reexamination Certificate

active

07452742

ABSTRACT:
To provide a back-illuminated solid-state imaging device able to suppress a crystal defect caused by a metal contamination in a process and to suppress a dark current to improve quantum efficiency, a camera including the same and a method of producing the same, having the steps of forming a structure including a substrate, a first conductive type epitaxial layer and a first conductive type impurity layer, the first conductive type epitaxial layer being formed on the substrate to have a first impurity concentration, and the first conductive type impurity layer being formed in a boundary region to have a second impurity concentration higher than the first impurity concentration of the epitaxial layer; forming a second conductive type region storing a charge generated by a photoelectric conversion in the epitaxial layer; forming an interconnection layer on the epitaxial layer; and removing the substrate.

REFERENCES:
patent: 6025585 (2000-02-01), Holland
patent: 2002/0038874 (2002-04-01), Egashira
patent: 2003/0170928 (2003-09-01), Shimozono et al.
patent: 2003/0214595 (2003-11-01), Mabuchi
patent: 2004/0005729 (2004-01-01), Abe et al.
patent: 2004/0113185 (2004-06-01), Shibayama et al.
patent: 2004-134672 (2004-04-01), None
European Search Report dated Nov. 2, 2006.

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