Solid state imaging device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S291000, C257S294000, C257S432000, C257S435000, C257S443000, C438S048000, C438S057000, C438S060000, C438S070000

Reexamination Certificate

active

07906824

ABSTRACT:
A solid state imaging device has a plurality of photodetector parts11arranged in matrix, a plurality of vertical charge transfer electrodes13that read out signal charge from the photodetector parts and transfer the signal charge in the vertical direction, and a first light-shielding film5that shields the plural vertical charge transfer parts from incident light. Each of the vertical charge transfer electrodes includes: a transfer channel12provided along the vertical array of the plural photodetector parts, a plurality of first transfer electrodes3athat are formed on the transfer channel so as to traverse the transfer channel and that is coupled in the horizontal direction in spacing between the photodetector parts; and second transfer electrodes3bprovided on the transfer channel and arranged between the first transfer electrodes. The first light-shielding film is formed continuously in the horizontal direction and has openings formed on the photodetector parts. Isolation regions having electroconductivity are formed between the photodetector parts and connected electrically to the second transfer electrode. Thereby, a shunt wiring structure capable of a high-speed transfer at a high sensitivity and with reduced smearing is obtained.

REFERENCES:
patent: 5250825 (1993-10-01), Negishi et al.
patent: 7102185 (2006-09-01), Nichols et al.
patent: 2006/0022235 (2006-02-01), Kanbe
patent: 2006/0138481 (2006-06-01), Suzuki
patent: 4-279059 (1992-10-01), None
patent: 2006-041369 (2006-02-01), None

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