Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

1997-07-25

2000-02-15

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 75, 257223, 257233, H01L 2100

Patent

active

060252103

ABSTRACT:
A solid-state imaging device provided here comprises a p-type semiconductor substrate, a p-type impurity layer formed thereon, a light-intercepting part formed inside said impurity layer for storing signal charges produced through incident light, and a n-type drain part formed in a region of the substrate excluding the light-intercepting part for discharging excess charges of the light-intercepting part. As a result, sensitivity characteristics on the long wavelength side can be improved, and miniaturization can be facilitated. An n-type buried drain part for discharging charges is formed under a transfer part via a p-type impurity layer. The readout side between the light-intercepting part and the transfer part is separated by a p-type readout control part which is installed to control threshold voltage (Vt), and the non-readout side is separated by a channel stopper. An insulating film is formed on the light-intercepting part and on the transfer part, and charges of the light-intercepting part are read out to the transfer part by the conductive-type electrode. For preventing dark current from arising, a p-type buried diffusion layer is formed at the interface of the light-intercepting part and the insulating film.

REFERENCES:
patent: 4831426 (1989-05-01), Kimata et al.
patent: 5476808 (1995-12-01), Kusaka et al.
patent: 5565374 (1996-10-01), Fukusho

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